Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications

S. Phillips, Ed Preisler, J. Zheng, S. Chaudhry, M. Racanelli, M. Müller, Michael Schröter, W. McArthur, D. Howard. Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Monterey, CA, USA, December 5-8, 2021. pages 1-5, IEEE, 2021. [doi]

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