An SRAM Design in 65-nm Technology Node Featuring Read and Write-Assist Circuits to Expand Operating Voltage - researchr publication

researchr

You are not signed in
Sign in
Sign up

Harold Pilo, Charlie Barwin, Geordie Braceras, Chris Browning, Steve Lamphier, Fred Towler. An SRAM Design in 65-nm Technology Node Featuring Read and Write-Assist Circuits to Expand Operating Voltage. J. Solid-State Circuits, 42(4):813-819, 2007. [doi]

Abstract is missing.

runs on WebDSL