Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs - researchr publication authors

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Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger. Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 3, IEEE, 2018. [doi]

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