Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger. Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 3, IEEE, 2018. [doi]
@inproceedings{PuschkarskyGAGR18,
title = {Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs},
author = {Katja Puschkarsky and Tibor Grasser and Thomas Aichinger and Wolfgang Gustin and Hans Reisinger},
year = {2018},
doi = {10.1109/IRPS.2018.8353560},
url = {https://doi.org/10.1109/IRPS.2018.8353560},
researchr = {https://researchr.org/publication/PuschkarskyGAGR18},
cites = {0},
citedby = {0},
pages = {3},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5386-5479-8},
}