Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs - researchr publication related

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Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger. Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 3, IEEE, 2018. [doi]

The following publications are possibly variants of this publication:

Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETsThomas Aichinger, Gerald Rescher, Gregor Pobegen. mr, 80:68-78, 2018. [doi]

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