V. Putcha, Jacopo Franco, Abhitosh Vais, Ben Kaczer, S. Sioncke, Dimitri Linten, Guido Groeseneken. Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 5, IEEE, 2018. [doi]
@inproceedings{PutchaFVKSLG18,
title = {Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps},
author = {V. Putcha and Jacopo Franco and Abhitosh Vais and Ben Kaczer and S. Sioncke and Dimitri Linten and Guido Groeseneken},
year = {2018},
doi = {10.1109/IRPS.2018.8353603},
url = {https://doi.org/10.1109/IRPS.2018.8353603},
researchr = {https://researchr.org/publication/PutchaFVKSLG18},
cites = {0},
citedby = {0},
pages = {5},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5386-5479-8},
}