Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps

V. Putcha, Jacopo Franco, Abhitosh Vais, Ben Kaczer, S. Sioncke, Dimitri Linten, Guido Groeseneken. Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 5, IEEE, 2018. [doi]

References

No references recorded for this publication.

Cited by

No citations of this publication recorded.