Field Tolerant Dynamic Intrinsic Chip ID Using 32 nm High-K/Metal Gate SOI Embedded DRAM

Sami Rosenblatt, Daniel Fainstein, Alberto Cestero, John Safran, Norman Robson, Toshiaki Kirihata, Subramanian S. Iyer. Field Tolerant Dynamic Intrinsic Chip ID Using 32 nm High-K/Metal Gate SOI Embedded DRAM. J. Solid-State Circuits, 48(4):940-947, 2013. [doi]

Authors

Sami Rosenblatt

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Daniel Fainstein

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Alberto Cestero

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John Safran

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Norman Robson

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Toshiaki Kirihata

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Subramanian S. Iyer

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