ESD failure signature in capacitive RF MEMS switches - researchr publication related

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J. Ruan, G. J. Papaioannou, N. Nolhier, N. Mauran, M. Bafleur, Fabio Coccetti, Robert Plana. ESD failure signature in capacitive RF MEMS switches. Microelectronics Reliability, 48(8-9):1237-1240, 2008. [doi]

The following publications are possibly variants of this publication:

Electrostatic discharge failure analysis of capacitive RF MEMS switchesJ. Ruan, N. Nolhier, M. Bafleur, L. Bary, Fabio Coccetti, T. Lisec, Robert Plana. mr, 47(9-11):1818-1822, 2007. [doi]

Failure analysis and detection methodology for capacitive RF-MEMS switches based on BEOL BiCMOS processN. Torres Matabosch, F. Coccetti, M. Kaynak, B. Espana, Bernd Tillack, J. L. Cazaux. mr, 53(9-11):1659-1662, 2013. [doi]

Life expectancy and characterization of capacitive RF MEMS switchesMohamed Matmat, K. Koukos, Fabio Coccetti, T. Idda, Antoine Marty, Christophe Escriba, Jean-Yves Fourniols, Daniel Estève. mr, 50(9-11):1692-1696, 2010. [doi]

Accelerated lifetime test of RF-MEMS switches under ESD stressJ. Ruan, N. Nolhier, G. J. Papaioannou, D. Trémouilles, V. Puyal, C. Villeneuve, T. Idda, Fabio Coccetti, Robert Plana. mr, 49(9-11):1256-1259, 2009. [doi]

x dielectric films used in RF MEMS capacitive switchesMatroni Koutsoureli, Loukas Michalas, E. Papandreou, George J. Papaioannou. mr, 55(9-10):1911-1915, 2015. [doi]

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