The following publications are possibly variants of this publication:
- An evaluation of 6T and 8T FinFET SRAM cell leakage currentsMichael A. Turi, José G. Delgado-Frias. mwscas 2014: 523-526 [doi]
- SRAM leakage in CMOS, FinFET and CNTFET technologies: leakage in 8t and 6t sram cellsZhe Zhang, Michael A. Turi, José G. Delgado-Frias. glvlsi 2012: 267-270 [doi]
- Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells With Reverse-Biased FinFETs, Near-Threshold Operation, and Power GatingMichael A. Turi, José G. Delgado-Frias. tcasII, 67-II(4):765-769, 2020. [doi]
- DD and near-threshold performance of 8T FinFET SRAM cellsMichael A. Turi, José G. Delgado-Frias. integration, 57:169-183, 2017. [doi]