Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors - researchr publication authors

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W. A. Sasangka, Yu Gao, Chee Lip Gan, Carl V. Thompson. Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors. Microelectronics Reliability, 88:393-396, 2018. [doi]

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