A 5-MHz, 3.6-mW, 1.4-V SRAM with nonboosted, vertical bipolar bit-line contact memory cell - researchr publication authors

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Hirotoshi Sato, Hideaki Nagaoka, Hiroaki Honda, Yukio Maki, Tomohisa Wada, Yutaka Arita, Kazuhito Tsutsumi, Makoto Taniguchi, Michihiro Yamada. A 5-MHz, 3.6-mW, 1.4-V SRAM with nonboosted, vertical bipolar bit-line contact memory cell. J. Solid-State Circuits, 33(11):1672-1681, 1998. [doi]

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