H. Sato, H. M. Shin, H. Jung, S. W. Lee, H. Bae, H. Kwon, K. H. Ryu, W. C. Lim, Y. S. Han, J.-H. Jeong, J. M. Lee, D. S. Kim, K. Lee, J. H. Lee, J. H. Park, Y. J. Song, Y. Ji, B. I. Seo, J. W. Kim, H. H. Kim. Comprehensive study on prediction of endurance properties from breakdown voltage in high-reliable STT-MRAM. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-5, IEEE, 2023. [doi]
Abstract is missing.