3 as charge-trapping layer for nonvolatile memory applications

R. P. Shi, X. D. Huang, Johnny K. O. Sin, P. T. Lai. 3 as charge-trapping layer for nonvolatile memory applications. Microelectronics Reliability, 65:64-68, 2016. [doi]

Authors

R. P. Shi

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X. D. Huang

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Johnny K. O. Sin

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P. T. Lai

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