R. P. Shi, X. D. Huang, Johnny K. O. Sin, P. T. Lai. 3 as charge-trapping layer for nonvolatile memory applications. Microelectronics Reliability, 65:64-68, 2016. [doi]
@article{ShiHSL16,
title = {3 as charge-trapping layer for nonvolatile memory applications},
author = {R. P. Shi and X. D. Huang and Johnny K. O. Sin and P. T. Lai},
year = {2016},
doi = {10.1016/j.microrel.2016.07.148},
url = {http://dx.doi.org/10.1016/j.microrel.2016.07.148},
researchr = {https://researchr.org/publication/ShiHSL16},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {65},
pages = {64-68},
}