The following publications are possibly variants of this publication:
- 2 as dual tunnel layer in Charge-Trapping nonvolatile memoryJ. X. Chen, J. P. Xu, L. Liu, X. D. Huang, P. T. Lai. mr, 54(2):393-396, 2014. [doi]
- 3 with and without nitridation for nonvolatile memory applicationsX. D. Huang, R. P. Shi, C. H. Leung, P. T. Lai. mr, 54(11):2388-2391, 2014. [doi]
- 2 trapping layers formed with low temperature processes on gate-all-around junctionless charge-trapping flash memory devicesHsin-Kai Fang, Kuei-Shu Chang-Liao, Chia-Hsin Cheng, Po-Yao Lin, Wen-Hsien Huang, Chang-Hong Shen, Jia-Min Shieh. mr, 91:319-322, 2018. [doi]