High Mobility n and p Channels on Gallium Arsenide and Silicon Substrates Using Interfacial Misfit Dislocation Arrays - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Darryl Shima, Ganesh Balakrishnan. High Mobility n and p Channels on Gallium Arsenide and Silicon Substrates Using Interfacial Misfit Dislocation Arrays. In IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014, Tampa, FL, USA, July 9-11, 2014. pages 374-379, IEEE, 2014. [doi]

This author has not been identified. Look up 'Darryl Shima' in GoogleThis author has not been identified. Look up 'Ganesh Balakrishnan' in Google

runs on WebDSL