Darryl Shima, Ganesh Balakrishnan. High Mobility n and p Channels on Gallium Arsenide and Silicon Substrates Using Interfacial Misfit Dislocation Arrays. In IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014, Tampa, FL, USA, July 9-11, 2014. pages 374-379, IEEE, 2014. [doi]
@inproceedings{ShimaB14,
title = {High Mobility n and p Channels on Gallium Arsenide and Silicon Substrates Using Interfacial Misfit Dislocation Arrays},
author = {Darryl Shima and Ganesh Balakrishnan},
year = {2014},
doi = {10.1109/ISVLSI.2014.99},
url = {http://dx.doi.org/10.1109/ISVLSI.2014.99},
researchr = {https://researchr.org/publication/ShimaB14},
cites = {0},
citedby = {0},
pages = {374-379},
booktitle = {IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014, Tampa, FL, USA, July 9-11, 2014},
publisher = {IEEE},
}