Darryl Shima, Ganesh Balakrishnan. High Mobility n and p Channels on Gallium Arsenide and Silicon Substrates Using Interfacial Misfit Dislocation Arrays. In IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014, Tampa, FL, USA, July 9-11, 2014. pages 374-379, IEEE, 2014. [doi]
Abstract is missing.