Compensation and doping effects in heavily helium-radiated silicon for power device applications

Ralf Siemieniec, H.-J. Schulze, F.-J. Niedernostheide, W. Südkamp, Josef Lutz. Compensation and doping effects in heavily helium-radiated silicon for power device applications. Microelectronics Journal, 37(3):204-212, 2006. [doi]

Abstract

Abstract is missing.