A novel si-tunnel FET based SRAM design for ultra low-power 0.3V V::::::DD:::::: applications - researchr publication authors

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J. Singh, Krishnan Ramakrishnan, S. Mookerjea, S. Datta, Narayanan Vijaykrishnan, D. K. Pradhan. A novel si-tunnel FET based SRAM design for ultra low-power 0.3V V::::::DD:::::: applications. In Proceedings of the 15th Asia South Pacific Design Automation Conference, ASP-DAC 2010, Taipei, Taiwan, January 18-21, 2010. pages 181-186, IEEE, 2010. [doi]

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