A novel si-tunnel FET based SRAM design for ultra low-power 0.3V V::::::DD:::::: applications

J. Singh, Krishnan Ramakrishnan, S. Mookerjea, S. Datta, Narayanan Vijaykrishnan, D. K. Pradhan. A novel si-tunnel FET based SRAM design for ultra low-power 0.3V V::::::DD:::::: applications. In Proceedings of the 15th Asia South Pacific Design Automation Conference, ASP-DAC 2010, Taipei, Taiwan, January 18-21, 2010. pages 181-186, IEEE, 2010. [doi]

@inproceedings{SinghRMDVP10,
  title = {A novel si-tunnel FET based SRAM design for ultra low-power 0.3V V::::::DD:::::: applications},
  author = {J. Singh and Krishnan Ramakrishnan and S. Mookerjea and S. Datta and Narayanan Vijaykrishnan and D. K. Pradhan},
  year = {2010},
  doi = {10.1109/ASPDAC.2010.5419897},
  url = {http://dx.doi.org/10.1109/ASPDAC.2010.5419897},
  tags = {design},
  researchr = {https://researchr.org/publication/SinghRMDVP10},
  cites = {0},
  citedby = {0},
  pages = {181-186},
  booktitle = {Proceedings of the 15th Asia South Pacific Design Automation Conference, ASP-DAC 2010, Taipei, Taiwan, January 18-21, 2010},
  publisher = {IEEE},
  isbn = {978-1-60558-837-7},
}