The following publications are possibly variants of this publication:
- A Stacked MOSFET-Based RF Switch with Inductive Biasing NetworkOguzhan Oezdamar, Valentyn Solomko. iscas 2025: 1-5 [doi]
- Model of Substrate Capacitance of MOSFET RF Switch Inspired by Inverted Microstrip LineValentyn Solomko, Oguzhan Oezdamar, Robert Weigel, Amelie Hagelauer. essderc 2021: 207-210 [doi]
- Arbitrary Shaped High-Voltage RF SwitchOguzhan Oezdamar, Semen Syroiezhin, Andrea Cattaneo, Valentyn Solomko. tcasII, 71(3):1571-1575, March 2024. [doi]
- High-Voltage CMOS RF Switch with Active BiasingValentyn Solomko, Semen Syroiezhin, Danial Tayari, Jochen Essel, Robert Weigel. esscirc 2022: 297-300 [doi]
- Switching Time Acceleration for High-Voltage CMOS RF SwitchSemen Syroiezhin, Oguzhan Oezdamar, Robert Weigel, Valentyn Solomko. esscirc 2022: 301-304 [doi]