A 10Mbit, 15GBytes/sec bandwidth 1T DRAM chip with planar MOS storage capacitor in an unmodified 150nm logic process for high-density on-chip memory applications

Dinesh Somasekhar, Shih-Lien Lu, Bradley A. Bloechel, Greg Dermer, Konrad Lai, Sjeljar Borkar, Vivek De. A 10Mbit, 15GBytes/sec bandwidth 1T DRAM chip with planar MOS storage capacitor in an unmodified 150nm logic process for high-density on-chip memory applications. In Laurent Fesquet, Andreas Kaiser, Sorin Cristoloveanu, Michel Brillouët, editors, Proceedings of the 31st European Solid-State Circuits Conference, ESSCIRC 2005, Grenoble, France, 12-16 September 2005. pages 355-358, IEEE, 2005. [doi]

Abstract

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