A Stable 2-Port SRAM Cell Design Against Simultaneously Read/Write-Disturbed Accesses - researchr publication

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Toshikazu Suzuki, Hiroyuki Yamauchi, Yoshinobu Yamagami, Katsuji Satomi, Hironori Akamatsu. A Stable 2-Port SRAM Cell Design Against Simultaneously Read/Write-Disturbed Accesses. J. Solid-State Circuits, 43(9):2109-2119, 2008. [doi]

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