Open/folded bit-line arrangement for ultra-high-density DRAM's

Daisaburo Takashima, Shigeyoshi Watanabe, Hiroaki Nakano, Yukihito Oowaki, Kazunori Ohuchi. Open/folded bit-line arrangement for ultra-high-density DRAM's. J. Solid-State Circuits, 29(4):539-542, April 1994. [doi]

Abstract

Abstract is missing.