Measurement of BTI-induced Threshold Voltage Shift for Power MOSFETs under Switching Operation

Aoi Ueda, Michihiro Shintani, Michiko Inoue, Takashi Sato. Measurement of BTI-induced Threshold Voltage Shift for Power MOSFETs under Switching Operation. In 29th IEEE Asian Test Symposium, ATS 2020, Penang, Malaysia, November 23-26, 2020. pages 1-6, IEEE, 2020. [doi]

@inproceedings{UedaSIS20,
  title = {Measurement of BTI-induced Threshold Voltage Shift for Power MOSFETs under Switching Operation},
  author = {Aoi Ueda and Michihiro Shintani and Michiko Inoue and Takashi Sato},
  year = {2020},
  doi = {10.1109/ATS49688.2020.9301598},
  url = {https://doi.org/10.1109/ATS49688.2020.9301598},
  researchr = {https://researchr.org/publication/UedaSIS20},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {29th IEEE Asian Test Symposium, ATS 2020, Penang, Malaysia, November 23-26, 2020},
  publisher = {IEEE},
  isbn = {978-1-7281-7467-9},
}