28 nm 50% Power-Reducing Contacted Mask Read Only Memory Macro With 0.72-ns Read Access Time Using 2T Pair Bitcell and Dynamic Column Source Bias Control Technique - researchr publication

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Yukiko Umemoto, Koji Nii, Jiro Ishikawa, Makoto Yabuuchi, Kazuyoshi Okamoto, Yasumasa Tsukamoto, Shinji Tanaka, Koji Tanaka, Tetsuya Matsumura, Kazutaka Mori, Kazumasa Yanagisawa. 28 nm 50% Power-Reducing Contacted Mask Read Only Memory Macro With 0.72-ns Read Access Time Using 2T Pair Bitcell and Dynamic Column Source Bias Control Technique. IEEE Trans. VLSI Syst., 22(3):575-584, 2014. [doi]

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