d) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs - researchr publication authors

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Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken. d) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-7, IEEE, 2019. [doi]

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