d) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs

Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken. d) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-7, IEEE, 2019. [doi]

@inproceedings{VandemaeleKTSMC19,
  title = {d) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs},
  author = {Michiel Vandemaele and Ben Kaczer and Stanislav Tyaginov and Zlatan Stanojevic and Alexander Makarov and Adrian Chasin and Erik Bury and Hans Mertens and Dimitri Linten and Guido Groeseneken},
  year = {2019},
  doi = {10.1109/IRPS.2019.8720406},
  url = {https://doi.org/10.1109/IRPS.2019.8720406},
  researchr = {https://researchr.org/publication/VandemaeleKTSMC19},
  cites = {0},
  citedby = {0},
  pages = {1-7},
  booktitle = {IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019},
  publisher = {IEEE},
  isbn = {978-1-5386-9504-3},
}