d) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs

Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken. d) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-7, IEEE, 2019. [doi]

Abstract

Abstract is missing.