On the correlation between Static Noise Margin and Soft Error Rate evaluated for a 40nm SRAM cell

Elena I. Vatajelu, Georgios Tsiligiannis, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Aida Todri, Arnaud Virazel, Frederic Wrobel, Frédéric Saigné. On the correlation between Static Noise Margin and Soft Error Rate evaluated for a 40nm SRAM cell. In 2013 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2013, New York City, NY, USA, October 2-4, 2013. pages 143-148, IEEE, 2013. [doi]

Abstract

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