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A full-quantum simulation study of InGaAs NW MOSFETs including interface traps

Michele Visciarelli, Antonio Gnudi, Elena Gnani, Susanna Reggiani. A full-quantum simulation study of InGaAs NW MOSFETs including interface traps. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 180-183, IEEE, 2016. [doi]

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Michele Visciarelli

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Antonio Gnudi

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Elena Gnani

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Susanna Reggiani

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