Michele Visciarelli, Antonio Gnudi, Elena Gnani, Susanna Reggiani. A full-quantum simulation study of InGaAs NW MOSFETs including interface traps. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 180-183, IEEE, 2016. [doi]
@inproceedings{VisciarelliGGR16,
title = {A full-quantum simulation study of InGaAs NW MOSFETs including interface traps},
author = {Michele Visciarelli and Antonio Gnudi and Elena Gnani and Susanna Reggiani},
year = {2016},
doi = {10.1109/ESSDERC.2016.7599616},
url = {http://dx.doi.org/10.1109/ESSDERC.2016.7599616},
researchr = {https://researchr.org/publication/VisciarelliGGR16},
cites = {0},
citedby = {0},
pages = {180-183},
booktitle = {46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016},
publisher = {IEEE},
isbn = {978-1-5090-2969-3},
}