A full-quantum simulation study of InGaAs NW MOSFETs including interface traps

Michele Visciarelli, Antonio Gnudi, Elena Gnani, Susanna Reggiani. A full-quantum simulation study of InGaAs NW MOSFETs including interface traps. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 180-183, IEEE, 2016. [doi]