Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics - researchr publication authors

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Miaomiao Wang, Richard G. Southwick, Kangguo Cheng, James H. Stathis. Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 6, IEEE, 2018. [doi]

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