Miaomiao Wang, Richard G. Southwick, Kangguo Cheng, James H. Stathis. Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 6, IEEE, 2018. [doi]
@inproceedings{WangSCS18,
title = {Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics},
author = {Miaomiao Wang and Richard G. Southwick and Kangguo Cheng and James H. Stathis},
year = {2018},
doi = {10.1109/IRPS.2018.8353639},
url = {https://doi.org/10.1109/IRPS.2018.8353639},
researchr = {https://researchr.org/publication/WangSCS18},
cites = {0},
citedby = {0},
pages = {6},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5386-5479-8},
}