A 1.0 fJ energy/bit single-ended 1 kb 6T SRAM implemented using 40 nm CMOS process - researchr publication authors

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Chua-Chin Wang, Ralph Gerard B. Sangalang, I-Ting Tseng, Yi-Jen Chiu, Yu-Cheng Lin, Oliver Lexter July A. Jose. A 1.0 fJ energy/bit single-ended 1 kb 6T SRAM implemented using 40 nm CMOS process. IET Circuits, Devices & Systems, 17(2):75-87, March 2023. [doi]

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