Radiation Tolerant SRAM Cell Design in 65nm Technology

Jianan Wang, Xue Wu, Haonan Tian, Lixiang Li 0003, Shuting Shi, Li Chen 0001. Radiation Tolerant SRAM Cell Design in 65nm Technology. J. Electronic Testing, 37(2):255-262, 2021. [doi]

@article{WangWTLSC21,
  title = {Radiation Tolerant SRAM Cell Design in 65nm Technology},
  author = {Jianan Wang and Xue Wu and Haonan Tian and Lixiang Li 0003 and Shuting Shi and Li Chen 0001},
  year = {2021},
  doi = {10.1007/s10836-021-05941-5},
  url = {https://doi.org/10.1007/s10836-021-05941-5},
  researchr = {https://researchr.org/publication/WangWTLSC21},
  cites = {0},
  citedby = {0},
  journal = {J. Electronic Testing},
  volume = {37},
  number = {2},
  pages = {255-262},
}