The following publications are possibly variants of this publication:
- Reduce Refresh Operations on 3-D TLC nand Flash System via Wordline (WL) InterferenceLiu Yang, Qi Wang 0041, Qianhui Li, Xiaolei Yu, Zongliang Huo. esl, 14(4):179-182, 2022. [doi]
- PEVA: A Page Endurance Variance Aware Strategy for the Lifetime Extension of NAND FlashDebao Wei, Libao Deng, Liyan Qiao, Peng Zhang, Xiyuan Peng. tvlsi, 24(5):1749-1760, 2016. [doi]
- Using Word Line (WL) Interference to Reduce Refresh Operations on 3D NAND Flash SystemLiu Yang, Qi Wang 0041, Qianhui Li, Xiaolei Yu, Zongliang Huo. icta3 2021: 216-217 [doi]
- Leveraging partial-refresh for performance and lifetime improvement of 3D NAND flash memory in cyber-physical systemsJinhua Cui, Youtao Zhang, Liang Shi, Chun Jason Xue, Jun Yang 0002, Weiguang Liu, Laurence T. Yang. jsa, 103:101685, 2020. [doi]
- BeLDPC: Bit Errors Aware Adaptive Rate LDPC Codes for 3D TLC NAND Flash MemoryMeng Zhang, Fei Wu, Qin Yu, Weihua Liu, Lanlan Cui, Yahui Zhao, Changsheng Xie. date 2020: 302-305 [doi]