Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs - researchr publication authors

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Peng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng-fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf. Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs. In Fan Ye, Ting-Ao Tang, editors, 14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021. pages 1-4, IEEE, 2021. [doi]

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