Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs

Peng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng-fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf. Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs. In Fan Ye, Ting-Ao Tang, editors, 14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021. pages 1-4, IEEE, 2021. [doi]

@inproceedings{WangZFWMLADAS21,
  title = {Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs},
  author = {Peng Wang and En-xia Zhang and Daniel M. Fleetwood and Peng-fei Wang and Michael W. McCurdy and Ji-Tzouh Lin and Michael L. Alles and Jim L. Davidson and Bruce W. Alphenaar and Ronald D. Schrimpf},
  year = {2021},
  doi = {10.1109/ASICON52560.2021.9620350},
  url = {https://doi.org/10.1109/ASICON52560.2021.9620350},
  researchr = {https://researchr.org/publication/WangZFWMLADAS21},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021},
  editor = {Fan Ye and Ting-Ao Tang},
  publisher = {IEEE},
  isbn = {978-1-6654-3867-4},
}