The following publications are possibly variants of this publication:
- Effect of MOSFET gate-to-drain parasitic capacitance on class-E power amplifierXiuqin Wei, Hiroo Sekiya, Shingo Kuroiwa, Tadashi Suetsugu, Marian K. Kazimierczuk. iscas 2010: 3200-3203 [doi]
- E power amplifier considering MOSFET parasitic input and output capacitancesMohsen Hayati, Sobhan Roshani, Marian K. Kazimierczuk, Hiroo Sekiya. iet-cds, 10(5):433-440, 2016. [doi]
- Design of Load-Independent Class-E Inverter with MOSFET Parasitic CapacitancesWeisen Luo, Xiuqin Wei, Hiroo Sekiya, Tadashi Suetsugu. mwscas 2019: 529-532 [doi]
- Design of class E amplifier with any output Q and nonlinear capacitance on MOSFETHiroo Sekiya, Yoji Arifuku, Hiroyuki Hase, Jianming Lu, Takashi Yahagi. ecctd 2005: 105-108 [doi]
- Design of Class-E Amplifier With MOSFET Linear Gate-to-Drain and Nonlinear Drain-to-Source CapacitancesXiuqin Wei, Hiroo Sekiya, Shingo Kuroiwa, Tadashi Suetsugu, Marian K. Kazimierczuk. tcas, 58-I(10):2556-2565, 2011. [doi]