A 28-nm 1R1W Two-Port 8T SRAM Macro With Screening Circuitry Against Read Disturbance and Wordline Coupling Noise Failures - researchr publication authors

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Makoto Yabuuchi, Yasumasa Tsukamoto, Hidehiro Fujiwara, Miki Tanaka, Shinji Shinji, Koji Nii. A 28-nm 1R1W Two-Port 8T SRAM Macro With Screening Circuitry Against Read Disturbance and Wordline Coupling Noise Failures. IEEE Trans. VLSI Syst., 26(11):2335-2344, 2018. [doi]

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