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Impacts of single trap induced random telegraph noise on Si and Ge nanowire FETs, 6T SRAM cells and logic circuits

Shao-Yu Yang, Yin-Nien Chen, Ming-Long Fan, Vita Pi-Ho Hu, Pin Su, Ching-Te Chuang. Impacts of single trap induced random telegraph noise on Si and Ge nanowire FETs, 6T SRAM cells and logic circuits. In Proceedings of 2013 International Conference on IC Design & Technology, ICICDT 2013, Pavia, Italy, May 29-31, 2013. pages 61-64, IEEE, 2013. [doi]

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