Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction - researchr publication authors

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Bo Yi, Haimeng Huang, Haoran Hu, MouFu Kong, Yilin Guo, Wenkun Shi, Junji Cheng, Hongqiang Yang. Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction. In 15th IEEE International Conference on ASIC, ASICON 2023, Nanjing, China, October 24-27, 2023. pages 1-4, IEEE, 2023. [doi]

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