Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction

Bo Yi, Haimeng Huang, Haoran Hu, MouFu Kong, Yilin Guo, Wenkun Shi, Junji Cheng, Hongqiang Yang. Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction. In 15th IEEE International Conference on ASIC, ASICON 2023, Nanjing, China, October 24-27, 2023. pages 1-4, IEEE, 2023. [doi]

Abstract

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