Yiyang Yuan, Yiming Yang, Xinghua Wang, Xiaoran Li, Cailian Ma, Qirui Chen, Meini Tang, Xi Wei, Zhixian Hou, Jialiang Zhu, Hao Wu, Qirui Ren, Guozhong Xing, Pui-In Mak, Feng Zhang 0014. 34.6 A 28nm 72.12TFLOPS/W Hybrid-Domain Outer-Product Based Floating-Point SRAM Computing-in-Memory Macro with Logarithm Bit-Width Residual ADC. In IEEE International Solid-State Circuits Conference, ISSCC 2024, San Francisco, CA, USA, February 18-22, 2024. pages 576-578, IEEE, 2024. [doi]
Abstract is missing.