High field stress at and above room temperature in 2.3 nm thick oxides - researchr publication authors

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D. Zander, C. Petit, F. Saigné, A. Meinertzhagen. High field stress at and above room temperature in 2.3 nm thick oxides. Microelectronics Reliability, 41(7):1023-1026, 2001. [doi]

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