High field stress at and above room temperature in 2.3 nm thick oxides

D. Zander, C. Petit, F. Saigné, A. Meinertzhagen. High field stress at and above room temperature in 2.3 nm thick oxides. Microelectronics Reliability, 41(7):1023-1026, 2001. [doi]

@article{ZanderPSM01,
  title = {High field stress at and above room temperature in 2.3 nm thick oxides},
  author = {D. Zander and C. Petit and F. Saigné and A. Meinertzhagen},
  year = {2001},
  doi = {10.1016/S0026-2714(01)00062-2},
  url = {http://dx.doi.org/10.1016/S0026-2714(01)00062-2},
  tags = {C++},
  researchr = {https://researchr.org/publication/ZanderPSM01},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {41},
  number = {7},
  pages = {1023-1026},
}